Impurities in Solids
Foreign atoms, or impurity atoms, may be present in a crystal lattice. Impurity atoms
may be located at normal lattice sites, in which case they are called . substitutional impurities.
Impurity atoms may also be located between normal sites, in which case
they are called interstitial impurities. Both these impurities are lattice defects and are
schematically shown in Figure 1.19. Some impurities, such as oxygen in silicon, tend
to he essentially inert; however, other impurities, such as gold or phosphorus in silicon,
can drastically alter the electrical properties of the material.
In Chapter 4 we will see that, by adding controlled amounts of particular impurity
atoms, the electrical characteristics of a semiconductor material can be favorably
altered. The technique of adding impurity atoms to a semiconductor material in order
to change its conductivity is called doping. There are two general methods of doping:
impurity diffusion and ion implantation.
The actual diffusion process depends to some extent on the material but, in general,
impurity diffusion occurs when a semiconductor crystal is placed in a high temperature
(= 1000°C) gaseous atmosphere containing the desired impurity atom.
At this high temperature, many of the crystal atoms can randomly move in and out of
their single-crystal lattice sites. Vacancies may be created by this random motion so
that impurity atoms can move through the lattice by hopping from one vacancy to another.
Impurity diffusion is the process by which impurity particles move from a region
of high concentration near the surface, to a region of lower concentration within
the crystal. When the temperature decreases, the impurity atoms become permanently
frozen into the substitutional lattice sites. Diffusion of various impurities into selected
regions of a semiconductor allows us to fabricate complex electronic circuits in a
single semiconductor crystal.
Ion implantation generally takes place at a lower temperature than diffusion. A
beam of impurity ions is accelerated to kinetic energies in the range of 50 keV or
greater and then directed to the surface of the semiconductor. The high-energy impurity
ions enter the crystal and come to rest at some average depth from the surface.
One advantage of ion implantation is that controlled numbers of impurity atoms can
be introduced into specific regions of the crystal. A disadvantage of this technique is
that the incident impurity atoms collide with the crystal atoms. causing lattice displacement
damage. However, most of the lattice damage can he removed by thermal
annealing, in which the temperature of the crystal is raised for a short time. Thermal
annealing is a required step after implantation.
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may be located at normal lattice sites, in which case they are called . substitutional impurities.
Impurity atoms may also be located between normal sites, in which case
they are called interstitial impurities. Both these impurities are lattice defects and are
schematically shown in Figure 1.19. Some impurities, such as oxygen in silicon, tend
to he essentially inert; however, other impurities, such as gold or phosphorus in silicon,
can drastically alter the electrical properties of the material.
In Chapter 4 we will see that, by adding controlled amounts of particular impurity
atoms, the electrical characteristics of a semiconductor material can be favorably
altered. The technique of adding impurity atoms to a semiconductor material in order
to change its conductivity is called doping. There are two general methods of doping:
impurity diffusion and ion implantation.
The actual diffusion process depends to some extent on the material but, in general,
impurity diffusion occurs when a semiconductor crystal is placed in a high temperature
(= 1000°C) gaseous atmosphere containing the desired impurity atom.
At this high temperature, many of the crystal atoms can randomly move in and out of
their single-crystal lattice sites. Vacancies may be created by this random motion so
that impurity atoms can move through the lattice by hopping from one vacancy to another.
Impurity diffusion is the process by which impurity particles move from a region
of high concentration near the surface, to a region of lower concentration within
the crystal. When the temperature decreases, the impurity atoms become permanently
frozen into the substitutional lattice sites. Diffusion of various impurities into selected
regions of a semiconductor allows us to fabricate complex electronic circuits in a
single semiconductor crystal.
Ion implantation generally takes place at a lower temperature than diffusion. A
beam of impurity ions is accelerated to kinetic energies in the range of 50 keV or
greater and then directed to the surface of the semiconductor. The high-energy impurity
ions enter the crystal and come to rest at some average depth from the surface.
One advantage of ion implantation is that controlled numbers of impurity atoms can
be introduced into specific regions of the crystal. A disadvantage of this technique is
that the incident impurity atoms collide with the crystal atoms. causing lattice displacement
damage. However, most of the lattice damage can he removed by thermal
annealing, in which the temperature of the crystal is raised for a short time. Thermal
annealing is a required step after implantation.
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